Vacancy-defect semiconductor quantum dots induced an S-scheme charge transfer pathway in 0D/2D structures under visible-light irradiation
Applied Catalysis B: Environmental, ISSN: 0926-3373, Vol: 306, Page: 121109
2022
- 103Citations
- 25Captures
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Article Description
Designing heterojunctions with a feasible charge transfer pathway is a promising strategy for establishing highly efficient artificial photosystems. The step-scheme (S-scheme) heterojunction has shown considerable potential in enhancing redox ability and charge transfer of photocatalysts. Herein, a hierarchical heterojunction involving vacancy-defect TiO 2 quantum dots (QDs) and 2D g-C 3 N 4 nanosheets was constructed using a multi-step assembly strategy. Computational and experimental studies show that the vacancy-defect TiO 2 QDs can induce an S-scheme charge transfer pathway in the 0D/2D heterojunction under visible-light irradiation, which greatly improved the redox ability of charge carriers, enhanced the charge transfer and separation at interfaces, and facilitated the H 2 O adsorption and dissociation. This results in over 10-fold increase in hydrogen evolution reaction (HER) of photocatalytic water splitting for a wide range of carbon nitrides. The values achieved compare favorably with the best carbon nitride photocatalysts developed to date.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0926337322000492; http://dx.doi.org/10.1016/j.apcatb.2022.121109; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85123631491&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0926337322000492; https://dx.doi.org/10.1016/j.apcatb.2022.121109
Elsevier BV
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