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Vacancy-defect semiconductor quantum dots induced an S-scheme charge transfer pathway in 0D/2D structures under visible-light irradiation

Applied Catalysis B: Environmental, ISSN: 0926-3373, Vol: 306, Page: 121109
2022
  • 103
    Citations
  • 0
    Usage
  • 25
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    103
    • Citation Indexes
      103
  • Captures
    25

Article Description

Designing heterojunctions with a feasible charge transfer pathway is a promising strategy for establishing highly efficient artificial photosystems. The step-scheme (S-scheme) heterojunction has shown considerable potential in enhancing redox ability and charge transfer of photocatalysts. Herein, a hierarchical heterojunction involving vacancy-defect TiO 2 quantum dots (QDs) and 2D g-C 3 N 4 nanosheets was constructed using a multi-step assembly strategy. Computational and experimental studies show that the vacancy-defect TiO 2 QDs can induce an S-scheme charge transfer pathway in the 0D/2D heterojunction under visible-light irradiation, which greatly improved the redox ability of charge carriers, enhanced the charge transfer and separation at interfaces, and facilitated the H 2 O adsorption and dissociation. This results in over 10-fold increase in hydrogen evolution reaction (HER) of photocatalytic water splitting for a wide range of carbon nitrides. The values achieved compare favorably with the best carbon nitride photocatalysts developed to date.

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