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Ferroelectric diode-like resistive switching behavior in Bi 0.95 Er 0.05 FeO 3 /CuFe 2 O 4 heterostructures for non-volatile memories

Applied Materials Today, ISSN: 2352-9407, Vol: 36, Page: 102074
2024
  • 1
    Citations
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    Usage
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    Captures
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    Mentions
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    Social Media
Metric Options:   Counts1 Year3 Year

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  • Citations
    1
  • Captures
    1
  • Mentions
    1
    • News Mentions
      1
      • 1

Most Recent News

Findings from Shaanxi University of Science and Technology Broaden Understanding of Applied Materials (Ferroelectric Diode-like Resistive Switching Behavior In Bi0.95er0.05feo3/ Cufe2o4 Heterostructures for Non-volatile Memories)

2024 APR 02 (NewsRx) -- By a News Reporter-Staff News Editor at Tech Daily News -- Researchers detail new data in Materials Research - Applied

Article Description

Non-volatile bipolar resistive random-access memory (RRAM) devices with the distinct heterostructures Bi 0.95 Er 0.05 FeO 3 /CuFe 2 O 4 (BEFO/CFO) and Bi 0.95 Er 0.05 FeO 3 /CuFe 2 O 4 /Bi 0.95 Er 0.05 FeO 3 (BEFO/CFO/BEFO) are fabricated by the sol-gel technique. The excellent resistive switching (RS) behavior is observed in both configurations. The ratio between the high resistance state (HRS) and low resistance state (LRS) of the BEFO/CFO heterostructure (10 2 ) exceeds that of the BEFO/CFO/BEFO heterostructure (10). The influences of the heterojunction interface on the RS characteristics underlying the RS mechanism are studied in detail. The conduction mechanism of the BEFO/CFO heterostructure predominantly arises from the space-charge-limited-conduction (SCLC) model, while the BEFO/CFO/BEFO heterostructure can be segmented into the SCLC model at the HRS and the Fowler-Nordheim (F-N) tunneling mechanism at the LRS. These results demonstrate that the RS characteristics can be tailored by manipulating the construction of heterojunction interfaces. Moreover, the I-V cycles, endurances and retention performance are also investigated.

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