Ferroelectric diode-like resistive switching behavior in Bi 0.95 Er 0.05 FeO 3 /CuFe 2 O 4 heterostructures for non-volatile memories
Applied Materials Today, ISSN: 2352-9407, Vol: 36, Page: 102074
2024
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Most Recent News
Findings from Shaanxi University of Science and Technology Broaden Understanding of Applied Materials (Ferroelectric Diode-like Resistive Switching Behavior In Bi0.95er0.05feo3/ Cufe2o4 Heterostructures for Non-volatile Memories)
2024 APR 02 (NewsRx) -- By a News Reporter-Staff News Editor at Tech Daily News -- Researchers detail new data in Materials Research - Applied
Article Description
Non-volatile bipolar resistive random-access memory (RRAM) devices with the distinct heterostructures Bi 0.95 Er 0.05 FeO 3 /CuFe 2 O 4 (BEFO/CFO) and Bi 0.95 Er 0.05 FeO 3 /CuFe 2 O 4 /Bi 0.95 Er 0.05 FeO 3 (BEFO/CFO/BEFO) are fabricated by the sol-gel technique. The excellent resistive switching (RS) behavior is observed in both configurations. The ratio between the high resistance state (HRS) and low resistance state (LRS) of the BEFO/CFO heterostructure (10 2 ) exceeds that of the BEFO/CFO/BEFO heterostructure (10). The influences of the heterojunction interface on the RS characteristics underlying the RS mechanism are studied in detail. The conduction mechanism of the BEFO/CFO heterostructure predominantly arises from the space-charge-limited-conduction (SCLC) model, while the BEFO/CFO/BEFO heterostructure can be segmented into the SCLC model at the HRS and the Fowler-Nordheim (F-N) tunneling mechanism at the LRS. These results demonstrate that the RS characteristics can be tailored by manipulating the construction of heterojunction interfaces. Moreover, the I-V cycles, endurances and retention performance are also investigated.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S2352940724000209; http://dx.doi.org/10.1016/j.apmt.2024.102074; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85182881983&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S2352940724000209; https://dx.doi.org/10.1016/j.apmt.2024.102074
Elsevier BV
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