Pulsed-laser-deposited, single-crystalline Cu 2 O films with low resistivity achieved through manipulating the oxygen pressure
Applied Surface Science, ISSN: 0169-4332, Vol: 435, Page: 305-311
2018
- 23Citations
- 35Captures
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Article Description
Low-resistivity, single-crystalline Cu 2 O films were realized on MgO (110) substrates through manipulating the oxygen pressure (P O2 ) of pulsed-laser deposition. X-ray diffraction and high resolution transmission electron microscopy measurements revealed that the films deposited at P O2 of 0.06 and 0.09 Pa were single phase Cu 2 O and the 0.09-Pa-deposited film exhibited the best crystallinity with an epitaxial relationship of Cu 2 O (110)∥MgO (110) with Cu 2 O (001)∥MgO (001). The pure phase Cu 2 O films exhibited higher transmittances and larger band gaps with an optical band gap of 2.56 eV obtained for the 0.09 Pa-deposited film. Hall-effect measurements demonstrated that the Cu 2 O film deposited at 0.09 Pa had the lowest resistivity of 6.67 Ω cm and highest Hall mobility of 23.75 cm 2 v −1 s −1.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0169433217334001; http://dx.doi.org/10.1016/j.apsusc.2017.11.119; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85034588893&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0169433217334001; https://dx.doi.org/10.1016/j.apsusc.2017.11.119
Elsevier BV
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