Photoresponse of large-area atomically thin β-Ga 2 O 3 and GaN materials via liquid metal print synthesized

This study uses liquid gallium metal to synthesize two-dimensional gallium oxide and gallium nitride ultra-thin layers. Addressing the challenges of conventional methods, this approach combines liquid metal properties with Polydimethylsiloxane (PDMS) transfer printing, resulting in large-area, highly clean, and low-residue amorphous Ga-based wide bandgap semiconductors. Transformation of amorphous Ga 2 O 3 into crystallized β-Ga 2 O 3 and GaN is achieved through annealing and ammoniation. Comprehensive characterizations confirm successful changes. Photodetector devices are fabricated and characterized, revealing Ga 2 O 3 photosensitive nature with distinct performance metrics. GaN, while exhibiting lower photoresponse, displays rapid photocurrent recovery, making it promising for photodetector applications. This research offers a scalable method for two-dimensional gallium-group semiconductor synthesis, holding potential for diverse optoelectronic applications.