Plasma-induced defects as nucleation sites for graphene on hexagonal boron nitride

Defect formation is inevitable in the preparation and application of two-dimensional (2D) materials, profoundly impacting their properties. Surface defects can also be used as reaction sites to achieve functional doping of 2D materials. Therefore, achieving controllable formation and application of defects in 2D materials is crucial. In this study, we utilize a remote plasma-enhanced chemical vapor deposition (R-PECVD) system to carry out controllable induced defects on hexagonal boron nitride (h-BN) surface. Atomic force microscopy (AFM) friction images and oxygen etching experiments confirm the efficacy of defect formation, with observed etching patterns indicating defect depths. Graphene growth experiments on h-BN substrates treated with varying plasma powers demonstrate a correlation between defect density and graphene nucleation density. Subsequent preparation of graphene films on defect-induced h-BN surfaces highlight the potential for enhancing graphene coverage. These findings offer a feasible solution for the functional modification and defect application of 2D materials.