Using SiN x double-layer deposition to reduce electrode incidence of short circuits due to impurity particles in thin film transistor preparation

Aviation safety relies on accurate scope presentation of air navigation displays, and lack of display information due to poor dot line may cause the pilot to misjudge the air conditions. Impurity particles occurred during preparing thin film transistor (TFT) circuit may be a leading reason for poor dot line. This work attempts to replace existing SiN x single-layer deposition with double-layer, so that the incidence risk can be lower through reducing number and size of the impurity particles. Double-layer deposition approach has the dot line structures and performances to that of single-layer, and can meet the requirements of display usage. Results of field test demonstrate that double-layer deposition reduces defect rate of display more efficient than single-layer. Proposed mechanism of double-layer deposition illuminates that 2nd-SiN x can cover holes generated by falling impurity particles to avoid short circuits in both indium tin oxide (ITO) and source-drain (SD) contact.