Microstructure-related enhancement of electrical properties in (La 3 B x MnO 3 ) (LaB 6 )-based composite films

A series of (La 1-x B x MnO 3 ) (LaB 6 )-based composite films were prepared by a combined magnetron sputtering and ion implantation method, and their structure-function relationship have been investigated. After B 3+ ion implantation, the as-sputtered LaMnO 3 films still have perovskite structure and good surface flatness. However, the substitution and doping of B ions play the role of resistance regulation, and the formation of the second phase LaB 6 reduces the resistivity of the film after ion implantation to a certain extent. The carrier concentration of the ion injected film will decrease from 1.33 × 10 16  cm −3 to 1.80 × 10 15  cm −3, while the resistivity value will a significant increase from 46 Ω cm to 381 Ω cm with slight variations in principle in thermal constant from 2229 to 2783 K. The secondary phase doping of (La 1-x B x MnO 3 ) (LaB 6 )-based perovskite materials bring an innovative perspective to the design and application of electronic materials.