Ti 1-x Al x N or TiN + AlN: An investigation about Al influence on titanium aluminum nitride thin films structural organization
Ceramics International, ISSN: 0272-8842, Vol: 51, Issue: 2, Page: 1813-1820
2025
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Research Data from Federal University Sergipe Update Understanding of Ceramics Research (Ti1-xalxn or Tin Plus Aln: an Investigation About Al Influence On Titanium Aluminum Nitride Thin Films Structural Organization)
2025 FEB 20 (NewsRx) -- By a News Reporter-Staff News Editor at Tech Daily News -- Fresh data on Technology - Ceramics Research are presented
Article Description
Ti 1-x Al x N thin films with different Al contents (Ti 0.8 Al 0.2 N, Ti 0.6 Al 0.4 N and Ti 0.4 Al 0.6 N) were deposited by reactive magnetron sputtering in order to determine the real structure formed in these coatings: a single ternary nitride, with a substitutional solid solution formation, or the presence of two binary nitrides, TiN + AlN. The elementary composition, morphology homogeneity, chemical elements distribution, crystalline structure, grain size evaluation, modification on coatings structure and formed compounds were determined. GAXRD analyses evinced a grain size growth for all Ti 1-x Al x N samples, suggesting that aluminum atoms are not present as a single AlN phase, but as a ternary nitride. In XPS analyses, N 1s spectrum for all samples exhibited a shift toward lower binding energies in Ti-N component, attesting the Ti-Al-N bond presence. Moreover, signatures of Al 3p and Ti 3d band shift were detected in the valence band region, confirming the Ti 1-x Al x N solid solution formation for all deposited samples.
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Elsevier BV
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