Forming-free bipolar memristive switching of ZnO films deposited by cyclic-voltammetry
Electrochimica Acta, ISSN: 0013-4686, Vol: 91, Page: 62-68
2013
- 14Citations
- 11Captures
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Article Description
Cyclic voltammetry deposition (CV-D) was applied to deposit ZnO films on indium-tin-oxide (ITO) glass. Delineated in details are the optimizations of CV-D parameters which bestow enhanced nucleation of ZnO grains. The result is much superior coverage of the CV-D thin films as compared to those obtained by conventional electrochemical deposition. Memristive devices in the stacks of Pt/ZnO/ITO were prepared and tested. The devices in which ZnO prepared by CV-sweeping within ±0.9 V for 6 cycles then fix-potential-deposited at −0.75 V for 300 s show reproducible forming-free bipolar switching operation at voltages ≤±1 V. The cycle-life in DC sweeping mode is at least 200 cycles. The electrical conduction belongs to space-charge-limited-current conduction mechanism, which is fitted to extract carrier mobility 0.97 cm 2 /V s and carrier concentration 8.6 × 10 18 cm −3. Chemical bonding status and concentration profiles of oxygen and zinc were examined by electron spectroscopy and an Auger electron nanoscope. Gradient oxygen bonding status in ZnO film, typical of cyclic voltammetry deposition, facilitates the electrical switching at low voltages.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0013468612019895; http://dx.doi.org/10.1016/j.electacta.2012.12.030; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84872790672&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0013468612019895; https://dx.doi.org/10.1016/j.electacta.2012.12.030
Elsevier BV
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