Constructing interfacial electric field and Zn vacancy modulated ohmic junctions ZnS/NiS for photocatalytic H 2 evolution
Green Energy & Environment, ISSN: 2468-0257, Vol: 9, Issue: 12, Page: 1847-1856
2024
- 14Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations14
- Citation Indexes14
- 14
- CrossRef3
Article Description
Adjusting the interfacial transport efficiency of photogenerated electrons and the free energy of hydrogen adsorption through interface engineering is an effective means of improving the photocatalytic activity of semiconductor photocatalysts. Herein, hollow ZnS/NiS nanocages with ohmic contacts containing Zn vacancy (V Zn -ZnS/NiS) are synthesized using ZIF-8 as templates. An internal electric field is constructed by Fermi level flattening to form ohmic contacts, which increase donor density and accelerate electron transport at the V Zn- ZnS/NiS interface. The experimental and DFT results show that the tight interface and V Zn can rearrange electrons, resulting in a higher charge density at the interface, and optimizing the Gibbs free energy of hydrogen adsorption. The optimal hydrogen production activity of V Zn -ZnS/NiS is 10,636 μmol h −1 g −1, which is 31.9 times that of V Zn -ZnS. This study provides an idea for constructing sulfide heterojunctions with ohmic contacts and defects to achieve efficient photocatalytic hydrogen production.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S246802572300167X; http://dx.doi.org/10.1016/j.gee.2023.12.007; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85182564263&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S246802572300167X; https://dx.doi.org/10.1016/j.gee.2023.12.007
Elsevier BV
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