Czochralski growth of Ga 1− x In x Sb single crystals with uniform compositions
Journal of Crystal Growth, ISSN: 0022-0248, Vol: 307, Issue: 2, Page: 268-277
2007
- 7Citations
- 3Captures
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Article Description
Severe macrosegregation tends to develop along Ga 1− x In x Sb alloy crystals grown by the conventional Czochralski process. Failure to eliminate macrosegregation by floating-crucible Czochralski has been attributed to InSb back diffusion from the floating crucible. In the present study Ga 1− x In x Sb crystals were grown from the growth melt in a floating crucible having a unique bottom tube that was wide to let the replenishing melt in the outer crucible pass through easily but long to suppress back diffusion. Ga 1− x In x Sb crystals with a uniform composition of 1 mol% InSb were grown as targeted. However, crystals of about 2 mol% InSb were grown when 4 mol% InSb was targeted. By using Bi 1− x Sb x as a model material, it was found that hydrodynamic instability caused the problem—the denser growth melt mixed with the lighter replenishing melt during or even before crystal growth. A new double-crucible Czochralski process was thus developed, with an upper chamber for the growth melt and a lower chamber for the replenishing melt. The slightly higher gas pressure in the lower chamber caused replenishing through a long capillary tube that suppressed mixing between the melts. Single crystals of Ga 1− x In x Sb were grown with uniform compositions up to 4.5 mol% InSb.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0022024807006203; http://dx.doi.org/10.1016/j.jcrysgro.2007.07.003; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=34548414587&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0022024807006203; https://dx.doi.org/10.1016/j.jcrysgro.2007.07.003
Elsevier BV
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