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Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses

Journal of Crystal Growth, ISSN: 0022-0248, Vol: 347, Issue: 1, Page: 113-118
2012
  • 2
    Citations
  • 0
    Usage
  • 10
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    2
    • Citation Indexes
      2
  • Captures
    10

Article Description

This study investigates how the thickness of Cr deposited on the Si substrate after the nitridation process influences the AIN buffer layer and the InN nanorods. Atomic force microscopy results reveal that different thicknesses of Cr form varying sizes of CrN nanoislands. The results of scanning electron microscopy and X-ray diffraction show that a Cr deposition thickness of 10 nm results in CrN nanoislands after the nitridation process, improving the quality and density of InN nanorods. A Cr layer that was too thick led to polycrystalline InN growth. The results of transmission electron microscopy indicate a baseball bat-like InN nanorod growth mechanism.

Bibliographic Details

K. W. Liu; S. J. Chang; T. H. Hsueh; S. J. Young; K. J. Chen; H. Hung; S. M. Wang; Y. Z. Chen; Y. L. Wu

Elsevier BV

Physics and Astronomy; Chemistry; Materials Science

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