Study on structural, optical, and electrical properties of yttrium doped molybdenum oxide thin film and its MIS diode performance

In this study, Orthorhombic pure MoO 3 and various weight percentages of Y-doped MoO 3 nanostructure arrays were successfully deposited using the simple jet nebulizer spray pyrolysis process at an ideal substrate temperature of 500 °C. In order to create metal-insulator-semiconductor-based Schottky barrier diodes, Y-doped MoO 3 nanostructure arrays were employed as an insulating layer. The influence of Y-doped MoO 3 concentration during the deposition process was carefully analyzed in relation to the structural, morphological, optical, and electrical characteristics of Y-doped MoO 3 nanostructure array films. The produced films' crystalline nature with an orthorhombic phase was shown by the XRD pattern. An FE-SEM was used to analyse the solidly linked plate-like structure of Y-doped MoO 3 at higher concentrations of 6 wt%. The EDAX spectrum was used to confirm the stoichiometric relationship between the elements O, Mo, and Y. The band gap values of the Y-doped MoO 3 were determined using UV–Vis spectroscopy to range from 3.3 to 3.18 eV with doped concentrations. The film made with 6 wt% Y doped MoO 3 showed a sharp improvement in electrical conductivity according to a DC electrical analysis. Notably, MIS diode made with 6 wt% Y-doped MoO 3 in particular showed a low ideality factor (n = 2.63), strong photosensitivity (P S  = 17,509.62%), responsivity of 738 mA/W, and a maximum QE of 97.49% under illumination (130 mW/cm 2 ). Additionally, a 6 wt percent Y-based diode obtained a greater detectivity of D* = 7.16 10 09 jones in a dark environment condition.