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Structural and photoluminescence characters of SnO 2 :Sb films deposited by RF magnetron sputtering

Journal of Luminescence, ISSN: 0022-2313, Vol: 114, Issue: 1, Page: 71-76
2005
  • 75
    Citations
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    Usage
  • 36
    Captures
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    Mentions
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    75
    • Citation Indexes
      75
  • Captures
    36

Article Description

The Antimony-doped tin oxide (SnO 2 :Sb) films have been prepared on glass substrates by RF magnetron sputtering method. The prepared samples are polycrystalline films with rutile structure of pure SnO 2 and have preferred orientation of (1 1 0) direction. XRD measurement did not detect the existence of Sb 2 O 3 phase and Sb 2 O 5 phase; Sb ions occupy the site of Sn ions and form the substitution doping. An intensive UV-violet luminescence peak near 392 nm is observed at room temperature. Photoluminescence (PL) properties influenced by sputtering power and annealing for the SnO 2 :Sb films are investigated in detail and corresponding PL mechanism is discussed.

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