Improvements in thermoelectric features by resonant-tunneling magnetic tunnel junctions with β-Ga 2 O 3 semiconductor
Journal of Magnetism and Magnetic Materials, ISSN: 0304-8853, Vol: 600, Page: 172161
2024
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
A study was conducted to investigate thermoelectric effects (TEEs) in resonant-tunneling magnetic tunnel junctions (RTMTJs) featuring wide-bandgap semiconductors such as ZnO and β-Ga2O3, along with a non-magnetic metal spacer. The transmission function was determined using the non-equilibrium Green’s function method within a tight-binding model. Significant enhancements in TEEs were observed for the β-Ga2O3 semiconductor compared to other materials, indicating its potential applicability in the emerging field of β-Ga2O3 spincaloritronics.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0304885324004529; http://dx.doi.org/10.1016/j.jmmm.2024.172161; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85193601191&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0304885324004529; https://dx.doi.org/10.1016/j.jmmm.2024.172161
Elsevier BV
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