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Photonic and phononic properties of oriented 5 nm diameter tellurium nanowires

Journal of Physics and Chemistry of Solids, ISSN: 0022-3697, Vol: 185, Page: 111806
2024
  • 5
    Citations
  • 0
    Usage
  • 2
    Captures
  • 1
    Mentions
  • 0
    Social Media
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  • Citations
    5
  • Captures
    2
  • Mentions
    1
    • News Mentions
      1
      • News
        1

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New Nanowires Findings from National Institute of Advanced Industrial Science and Technology (NIAIST) Discussed (Photonic and Phononic Properties of Oriented 5 Nm Diameter Tellurium Nanowires)

2024 FEB 06 (NewsRx) -- By a News Reporter-Staff News Editor at Japan Daily Report -- Research findings on Nanotechnology - Nanowires are discussed in

Article Description

We study polarized optical absorption and Raman spectra (OAS and RS) of ∼5 nm diameter tellurium (Te) nanowires (NWs) confined in chrysotile asbestos nanotubes packed parallel to each other into nearly-perfect-hexagonal lattice. Te was encapsulated into the nanotubes from molt using ∼20 kbar pressure. Asbestos with Te NWs (asb-Te) shows a high OAS/RS anisotropy due to a strong NW-light interaction for the light polarized papallel to NWs ( E // c ) and a weak one for the light polarized perpendicular to NWs. Importantly, asb-Te RS display bands of confined acoustic phonons at ∼9 cm −1 and ∼23 cm −1, specific signatures of 5 nm diameter Te NWs. Density-functional-theory calculation shows agreement with the observed frequencies and flattening of NW acoustic phonon dispersions useful for thermo-electricity. Asb-Te optical phonon A 1 -mode Raman band displays frequency upshift compared to the bulk-Te band due to enhancement of the intrachain bonds on expense of interchain ones. Asb-Te 2nd-order RS confirm this. Surprisingly, E-modes display LO-phonon RS-activity in asb-Te instead of TO-phonon-activity in bulk-Te. We observe enhancement of the NW Raman signal compared to that of bulk Te, which is associated with the Mie-resonance-induced NW-light interaction enhancement for E // c, which is important for photonic and photo-electric applications.

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