Amorphous (LuGa) 2 O 3 film for deep-ultraviolet photovoltaic detector
Materials Letters, ISSN: 0167-577X, Vol: 297, Page: 129980
2021
- 4Citations
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Article Description
Wide-band-gap semiconductor photosensitive material has a significant impact on the performance of deep-ultraviolet photodetector, which makes exploring novel high-quality wide-band-gap semiconductor a hot topic in the field of deep-ultraviolet detection. In this paper, we propose an efficient method to grow wide-band-gap semiconductor, according to which a wide-band-gap amorphous (LuGa) 2 O 3 film is successfully prepared by magnetron sputtering Lu 2 O 3 and Ga 2 O 3 targets simultaneously, and a photovoltaic type deep-ultraviolet detector based on that amorphous (LuGa) 2 O 3 film is fabricated. The detector exhibits an extremely low dark current of 25 pA, a high photo-to-dark current ratio of 10 3, a high responsivity of 8.0 mA/W and good stability. All the results achieved in this study demonstrate that magnetron sputtering is an efficient method to grow wide-band-gap alloyed semiconductor and also get the possibility of (LuGa) 2 O 3 film as a promising material for deep-ultraviolet detection.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0167577X21006765; http://dx.doi.org/10.1016/j.matlet.2021.129980; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85105330782&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0167577X21006765; https://dx.doi.org/10.1016/j.matlet.2021.129980
Elsevier BV
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