Synthesis, characterization and electrical properties of conducting nanoparticles of graphene oxide

In this work, we presented a novel method to produce graphene oxide – nanoparticles. This method based on burning polyvinyl alcohol upon the surface of SiO 2 /p-Si surface. Graphene oxide, whatever its method of preparation, usually has lower values of electrical conductivity. Researchers perform a reduction process to improve its electrical conductivity. The new in our method is that, the prepared graphene oxide has high electrical conductivity. This is originated from raising the temperature to be about 400C during preparation giving save of effort, time and money. GO structure was confirmed using SEM, FTIR, Raman spectroscopy and XRD techniques. Electric properties for GO/SiO2/p-Si were done by using I-V measurement. Ideality factor, barrier height, series resistance, shunt resistance and resistance junction were all determined. Dielectric characteristics including variations of capacitance ( C ) and conductance ( G ) with voltage are studied. The complex permittivity ( ε* ) and real part of conductivity ( σac ) in addition to loss tangent (tan δ ) have indicated a strong function of temperature and applied voltage. The features of the ( Z' ), Z'' and σac'', σac' below the altering voltages and temperatures established a shape of semicircle having a semicircular center underneath the Z’ and σac' coordinate. The thickness of silicon oxide layer calculated for the sample was found to be 46 nm.