Modeling of line edge roughness transfer during plasma etching
Microelectronic Engineering, ISSN: 0167-9317, Vol: 86, Issue: 4, Page: 968-970
2009
- 17Citations
- 20Captures
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Article Description
Although a lot of interest has been devoted to the sidewall roughness of resist lines after lithography (usually called resist line edge roughness, LER), much less attention has been paid on how resist LER is transferred to underlayers through etching steps. The aim of this paper is to investigate this impact by means of two models. The first model takes into account the full three-dimensional (3D) set up of the LER transfer problem and considers the ion bombardment as the main etching mechanism. The second simulates the etching transfer with the phenomenological isotropic movement of the rough edges of lines in two-dimensions (2D). Both models predict a significant reduction of the rms value of LER when it is transferred to underlayers. The reduction becomes stronger at low litho-resist correlation lengths. Furthermore, both models give similar trends versus changes in litho-resist rms values, although noticeable quantitative differences are found. The latter seems to lead to the conclusion that the vertical ion bombardment (3D model) alone cannot account for the phenomenological isotropic movement of rough edges of top down scanning electron microscope images (2D model).
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0167931709000641; http://dx.doi.org/10.1016/j.mee.2009.01.040; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=65849488436&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0167931709000641; https://dx.doi.org/10.1016/j.mee.2009.01.040
Elsevier BV
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