Organic thin film transistors with double insulator layers
Microelectronics Journal, ISSN: 1879-2391, Vol: 38, Issue: 8, Page: 919-922
2007
- 9Citations
- 8Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
We have investigated a double-layer structured gate dielectric for the organic thin films transistor (OTFT) with the purpose of improving the performance of the SiO 2 gate insulator. A 50 nm PMMA layer was coated on top of the SiO 2 gate insulator as organic insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layers is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical parameters such as carrier mobility and on/off ratio by field effect measurement have been calculated. OTFT based on highly doped Si substrate with a field-effect mobility of 0.004 cm 2 /V s and on/off ratio of 10 4 have been obtained.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0026269207000833; http://dx.doi.org/10.1016/j.mejo.2007.04.014; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=34748874025&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0026269207000833; https://dx.doi.org/10.1016/j.mejo.2007.04.014
Elsevier BV
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