Experimental study and analysis of corner compensation structures for CMOS compatible bulk micromachining using 25 wt% TMAH
Microelectronics Journal, ISSN: 1879-2391, Vol: 42, Issue: 1, Page: 127-134
2011
- 16Citations
- 8Captures
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Article Description
In the present work, most common compensation structures (〈1 1 0〉 squares and 〈1 0 0〉 bars) have been used for convex corner compensation with 25 wt% TMAH–water solution at 90±1 °C temperature. Etch flow morphology and self-align properties of the compensating structures have been investigated. For 25 wt% TMAH water solution {3 1 1} plane is found to be responsible for corner undercutting, which is the fast etch plane. Etch-front-attack angle is measured to be 24°. Generalized empirical formulas are also discussed for these compensation structures for TMAH–water solution. 〈1 1 0〉 square structure protects mesa and convex corner and is the most space efficient compared to other compensation structures, but unable to produce perfect convex corner as 〈1 0 0〉 bar type structures. Both the 〈1 0 0〉 bar structures provide perfect convex corners, but 〈1 0 0〉 wide bar structure is more space efficient than the 〈1 0 0〉 thin bar structure. Implications of these compensation structures with realization of accelerometer structure have also been discussed. A modified quad beam accelerometer structure has been realized with these compensation structures using 25 wt% TMAH.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0026269210001874; http://dx.doi.org/10.1016/j.mejo.2010.08.018; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=78650696128&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0026269210001874; https://dx.doi.org/10.1016/j.mejo.2010.08.018
Elsevier BV
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