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Experimental study and analysis of corner compensation structures for CMOS compatible bulk micromachining using 25 wt% TMAH

Microelectronics Journal, ISSN: 1879-2391, Vol: 42, Issue: 1, Page: 127-134
2011
  • 16
    Citations
  • 0
    Usage
  • 8
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    16
    • Citation Indexes
      16
  • Captures
    8

Article Description

In the present work, most common compensation structures (〈1 1 0〉 squares and 〈1 0 0〉 bars) have been used for convex corner compensation with 25 wt% TMAH–water solution at 90±1 °C temperature. Etch flow morphology and self-align properties of the compensating structures have been investigated. For 25 wt% TMAH water solution {3 1 1} plane is found to be responsible for corner undercutting, which is the fast etch plane. Etch-front-attack angle is measured to be 24°. Generalized empirical formulas are also discussed for these compensation structures for TMAH–water solution. 〈1 1 0〉 square structure protects mesa and convex corner and is the most space efficient compared to other compensation structures, but unable to produce perfect convex corner as 〈1 0 0〉 bar type structures. Both the 〈1 0 0〉 bar structures provide perfect convex corners, but 〈1 0 0〉 wide bar structure is more space efficient than the 〈1 0 0〉 thin bar structure. Implications of these compensation structures with realization of accelerometer structure have also been discussed. A modified quad beam accelerometer structure has been realized with these compensation structures using 25 wt% TMAH.

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