Material level analytical model of total ionizing dose induced DC characteristics shift for FDSOI IC design
Microelectronics Reliability, ISSN: 0026-2714, Vol: 151, Page: 115273
2023
- 2Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations2
- Citation Indexes2
Article Description
A charge build-up model implemented in a netlist coupled with L-UTSOI model, which takes into account the deposited dose as an input parameter, is presented for Fully Depleted Silicon On Insulator (FDSOI) transistors. The model is based on the rate equations governing the physical processes of the charge build-up in the oxides. Based on in-house irradiation measurement, our model is calibrated on experimental Id - Vg characteristics in order to find the model parameters and extract the contribution of the oxide and interface trapped charges.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0026271423003736; http://dx.doi.org/10.1016/j.microrel.2023.115273; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85177231269&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0026271423003736; https://dx.doi.org/10.1016/j.microrel.2023.115273
Elsevier BV
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