Variation of TiO 2 /SiO 2 mixed layers induced by Xe + ion irradiation with energies from 100 to 250 keV
Materials Science and Engineering: B, ISSN: 0921-5107, Vol: 277, Page: 115566
2022
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Article Description
The broadening and changes in optical parameters of TiO 2 /SiO 2 transition layers irradiated with Xe + ions of energies 100, 150, 200, and 250 keV have been investigated using the Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE) methods. We observed that a rise in atomic mixing at the TiO 2 /SiO 2 interface increases its transition layer thickness with increasing ion energy. The discrepancies in transition layers are interpreted by employing the defect profiles and ion energy loss obtained from Stopping and Range of Ions in Matter (SRIM) calculations. The refractive index and the extinction coefficient of irradiated TiO 2 /SiO 2 samples were found to be higher than those of virgin ones with irradiating ion energies below 250 keV. Their disparity heightens with increasing ion energy up to 200 keV and then decreases at 250 keV.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0921510721005201; http://dx.doi.org/10.1016/j.mseb.2021.115566; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85121653497&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0921510721005201; https://dx.doi.org/10.1016/j.mseb.2021.115566
Elsevier BV
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