pMOSFETs with recessed and selectively regrown Si 1− x Ge x source/drain junctions
Materials Science in Semiconductor Processing, ISSN: 1369-8001, Vol: 8, Issue: 1, Page: 359-362
2005
- 1Citations
- 4Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
A new source/drain formation concept based on selective Si etching followed by selective regrowth of in situ B-doped Si 1− x Ge x is presented. Both process steps are performed in the same reactor to preserve the gate oxide. Well-behaved transistors are demonstrated with a negligibly low gate-to-substrate leakage current.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S1369800104001349; http://dx.doi.org/10.1016/j.mssp.2004.09.045; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=13244272291&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S1369800104001349; https://dx.doi.org/10.1016/j.mssp.2004.09.045
Elsevier BV
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