Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (10 18 -10 21 cm −3 ) by ion implantation/pulsed laser annealing
Materials Science in Semiconductor Processing, ISSN: 1369-8001, Vol: 184, Page: 108830
2024
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Captures5
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Article Description
Spectral range of crystalline silicon absorption could be extended to near- and even mid-infrared region by its hyperdoping via ion-implantation technology, requiring the following thermal annealing for removing ion-induced defects, recrystallizing the crystalline structure and activating the doping impurity. In this article, the crystalline structure, chemical and electrical characteristics of sulfur-hyperdoped silicon layers with broadly variable impurity concentration (10 18 -10 21 cm −3 ) and annealed by a nanosecond laser were investigated for the first time by Raman, energy-dispersion x-ray and infrared spectroscopy, as well as by van der Paw and Hall measurements, respectively. The most preferable sulfur concentration for silicon hyperdoping from the point of view of impurity optical and electrical activation was found to be 10 20 cm −3.
Bibliographic Details
Elsevier BV
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