380 keV proton irradiation effects on photoluminescence of Eu-doped GaN
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN: 0168-583X, Vol: 266, Issue: 5, Page: 853-856
2008
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Article Description
The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1×1013cm-2, a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5D0→7F2 transition in Eu3+ kept the initial PL intensity after the proton irradiation up to 1×1014cm-2. Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0168583X08000256; http://dx.doi.org/10.1016/j.nimb.2007.12.103; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=40949127340&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0168583X08000256; https://dx.doi.org/10.1016/j.nimb.2007.12.103
Elsevier BV
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