Low threshold lasing of GaN-based vertical-cavity surface-emitting lasers with thin InGaN/GaN quantum well active region
Optics & Laser Technology, ISSN: 0030-3992, Vol: 182, Page: 112117
2025
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Article Description
We studied the mechanism of low-threshold lasing of InGaN/GaN double quantum well (DQW) vertical-cavity surface-emitting lasers (VCSELs) showing a low threshold energy density of about 0.37mJ/cm 2 via optical pumping at room temperature (RT). The QW with thin well (2.5 nm) and barrier (6 nm) led to the stronger carrier localization effect and weaker quantum confined Stark effect (QCSE). Temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) were employed on half-cavity samples (VCSEL without top distributed Bragg reflector) to study the carrier dynamics in VCSEL microcavity. Compared with epitaxial layer, half-cavity samples showed the higher turning point temperature of TDPL peak energy, and the carrier lifetime measured by TRPL was shorter. The experimental results suggest that the stronger localization effect of thin QW and the strong coupling of QW and internal optical field can contribute to the low-threshold lasing of GaN-based VCSELs.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0030399224015755; http://dx.doi.org/10.1016/j.optlastec.2024.112117; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85208988915&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0030399224015755; https://dx.doi.org/10.1016/j.optlastec.2024.112117
Elsevier BV
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