Ternary flash memory device based on polycarbazole with ZrO 2 composite materials

The poly[2,7-9-(9-heptadecanyl)-9H-carbazole-co-benzo[4,5] imidazole[2,1-a]isoindol-11-one] (PCz-O) was synthesized by Suzuki coupling reaction, which structure was verified by FT-IR, 1 H NMR and 13 C NMR. The spin coating method was used to prepare RRAM devices based on PCz-O: ZrO 2 nanoparticle active layer, and the devices exhibited ternary switching. Through a series of performance tests, both pure polymer device and composited with ZrO 2 NPs devices had ternary storage characteristics. Among them, the content of composited with 8 wt% ZrO 2 showed the most excellent ternary storage characteristics. The ON/OFF current ratio was 2.60 × 10 4, and the threshold voltage V th1 / V th2 was −0.60 V/-1.00 V. The current is stable for 10000 s in both ON/OFF states. After 3300 times of reading, the switch state current of the devices had slight variation. In addition, the switching mechanism of the device was also discussed. Through carefully testing and analyzing, the devices had good stability and durability, and had potential application value in terms of data storage.