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High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

Organic Electronics, ISSN: 1566-1199, Vol: 101, Page: 106413
2022
  • 13
    Citations
  • 0
    Usage
  • 8
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    13
    • Citation Indexes
      13
  • Captures
    8

Article Description

Titanium dioxide (TiO 2 ) dielectric has the potential to achieve low cost and low energy consumption in the area of Thin Film Transistor (TFT) due to its high relative dielectric constant. However, the large leakage current limits its application. In this paper, Polyvinylpyrrolidone (PVP) modified TiO 2 composite dielectric was prepared by the sol-gel method with a series of PVP concentrations. With increasing PVP concentration, the roughness, thickness and band gap increased, the leakage current density first decreased and then increased, while the area capacitance and the relative dielectric constant (k) decreased. After comparison, 0.05 wt% was the optimal modification concentration. TiO 2 : 0.05 wt % PVP composite film had smooth morphology and low roughness. The leakage current density of the Metal-Insulator-Metal (MIM) device (with the composite film as the insulator layer) was as low as 6.88 × 10 −9 A/cm 2 (at 1 MV/cm), and k is 69.7. PVP modified TiO 2 composite film showed good dielectric characteristics and satisfied the development trend of low leakage current and low energy consumption devices.

Bibliographic Details

Yuexin Yang; Zhuohui Xu; Tian Qiu; Honglong Ning; Jinyao Zhong; Muyun Li; Dongxiang Luo; Xianzhe Liu; Rihui Yao; Junbiao Peng

Elsevier BV

Materials Science; Chemistry; Physics and Astronomy; Engineering

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