UV-enhanced O 2 sensing using β-Ga 2 O 3 nanowires at room temperature
Sensors and Actuators A: Physical, ISSN: 0924-4247, Vol: 379, Page: 115997
2024
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
Oxygen sensors based on β-Ga 2 O 3 nanowires were prepared by a chemical vapor deposition method and investigated in detail. β-Ga 2 O 3 nanowires grew on sapphire substrate at 1100 °C with Au as a catalyst. The polycrystalline structure was confirmed according to the X-ray diffraction (XRD) patterns. Scanning electron microscope (SEM) images revealed the average diameter of the nanowires was 150 nm. The ratio of Ga to O was 0.765 according to energy dispersive spectroscopy (EDS) results. Photoluminescence emissions at 445 and 484 nm originated from oxygen vacancies and gallium-oxygen vacancy pairs. Both EDS results and photoluminescence revealed intrinsic oxygen vacancies in β-Ga 2 O 3 nanowires. We coated the β-Ga 2 O 3 nanowires on an interdigitated electrode to fabricated an oxygen sensor. Under ultraviolet light irradiation, at room temperature, the sensor’s response rise time and recovery time were 1034 s and 1283 s to 600 ppm oxygen, those were 1290 s and 1709 s to 1200 ppm oxygen. The mechanism of oxygen sensing was discussed.
Bibliographic Details
Elsevier BV
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