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Fabrication of a ppb-level NO 2 gas sensor by sensitizing nanobundles assembled by In 2 O 3 nanotubes with TiO 2 quantum dots

Sensors and Actuators B: Chemical, ISSN: 0925-4005, Vol: 387, Page: 133833
2023
  • 38
    Citations
  • 0
    Usage
  • 16
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    38
    • Citation Indexes
      38
  • Captures
    16

Article Description

Oxygen deficiency in metal oxide semiconductors (MOS) is a significant factor in the performance of gas sensing. Quantum dots (QDs)-decorated MOS exhibit better gas sensing performance due to rich oxygen deficiencies induced by the QDs. Therefore, titanium oxide (TiO 2 ) QDs-decorated indium oxide (In 2 O 3 ) composite was synthesized for this study via electrospinning. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to observe the self-assembly of In 2 O 3 nanotubes, and TiO 2 QDs were uniformly dispersed on the In 2 O 3 nanotube wall. Moreover, the result of X-ray photoelectron spectroscopy (XPS) reveals that TiO 2 QDs can increase the proportion of oxygen deficiency. The sensor based on IT1 sample has a response toward 10 parts per million (ppm) NO 2 (214.3) that is 7.76 times higher than that of the IT0. Furthermore, the sensor has fast response/recovery characteristics, low detection limit, and high moisture resistance. The enhanced sensing performance can be understood as electronic and geometrical effects. The method of QDs-induced oxygen deficiency to improve the sensing performance toward NO 2 and in-depth study of the sensing mechanism can provide new perspectives for the construction of NO 2 gas sensors.

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