Going ballistic: Graphene hot electron transistors
Solid State Communications, ISSN: 0038-1098, Vol: 224, Page: 64-75
2015
- 40Citations
- 57Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0038109815002951; http://dx.doi.org/10.1016/j.ssc.2015.08.012; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84947603528&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0038109815002951; https://dx.doi.org/10.1016/j.ssc.2015.08.012
Elsevier BV
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