Strong quantization of current-carrying electron states in δ -layer systems
Solid-State Electronics, ISSN: 0038-1101, Vol: 200, Page: 108532
2023
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
We present an open-system quantum-mechanical real-space study of the conductive properties and size quantization in phosphorus δ -layers systems, interesting for their beyond-Moore and quantum computing applications. Recently it has been demonstrated that an open-system quantum mechanical treatment provides a much more accurate match to ARPES measurements in highly-conductive, highly-confined systems than the traditional approaches (i.e. periodic or Dirichlet boundary conditions) and, furthermore, it allows accurate predictions of conductive properties of such systems from the first principles. Here we reveal that quantization effects are strong for device widths W<10nm, and we show, for the first time, that the number of propagating modes determines not only the conductivity, but the distinctive spatial distribution of the current-carrying electron states. For W>10nm, the quantization effects practically vanish and the conductivity tends to the infinitely-wide device’s values.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0038110122003033; http://dx.doi.org/10.1016/j.sse.2022.108532; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85145560453&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0038110122003033; https://dx.doi.org/10.1016/j.sse.2022.108532
Elsevier BV
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