Stability of In rows on Si(1 0 0) during STM observation
Surface Science, ISSN: 0039-6028, Vol: 601, Issue: 18, Page: 4506-4509
2007
- 28Citations
- 13Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Article Description
Structural and dynamical properties of In rows grown on the Si(1 0 0)2 × 1 surface were studied in detail by the scanning tunneling microscopy at room temperature. The rows on terraces are preferably pinned to C-type defects, the unpinned ends detach and attach In atoms during observation. Evolution of the rows was recorded with single atom precision. Time constants for detachment of atoms from the rows were measured as a function of row length; a stabilizing effect of the C-type defects was quantified. Dynamics of the In rows was found to depend on tunneling voltage. An effect of electric field is proposed to be responsible for the influence.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0039602807004670; http://dx.doi.org/10.1016/j.susc.2007.04.132; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=34548652346&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0039602807004670; https://dx.doi.org/10.1016/j.susc.2007.04.132
Elsevier BV
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