Heavy atomic-layer doping of nitrogen in Si 1−x Ge x film epitaxially grown on Si(100) by ultraclean low-pressure CVD
Thin Solid Films, ISSN: 0040-6090, Vol: 518, Issue: 6, Page: S62-S64
2010
- 8Citations
- 6Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
N atomic-layer doping in a nanometer-order Si/Si 1−x Ge x /Si(100) heterostructure using ultraclean low-pressure chemical vapor deposition and its thermal stability at 650 °C were investigated. In the Si 0.5 Ge 0.5 epitaxial layer, it is found that a N doping dose of 6 × 10 14 cm −2 can be confined within an about 1.5 nm-thick region even after 650 °C heat treatment in contrast to the result for Si cap layer growth on the thermally nitrided Si(100) with a N doping dose of 6 × 10 14 cm −2 which was found to be amorphous. Moreover, it is suggested that the confined N atoms in Si 1−x Ge x preferentially form Si–N bonds and that formation of Si 3 N 4 is enhanced by the heat treatment at 650 °C.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S004060900901699X; http://dx.doi.org/10.1016/j.tsf.2009.10.056; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=73649125840&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S004060900901699X; https://dx.doi.org/10.1016/j.tsf.2009.10.056
Elsevier BV
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know