Effect of precursor structure on Cu(InGa)Se 2 formation by reactive annealing
Thin Solid Films, ISSN: 0040-6090, Vol: 519, Issue: 21, Page: 7245-7249
2011
- 25Citations
- 40Captures
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Article Description
Precursor structures of Mo/CuGa/In, Mo/In/CuGa, Mo/In/CuGa/In and Mo/CuGaIn were prepared on thin sodium-free glass by the sputtering of CuGa and In targets. In-situ phase evolution of precursors with temperature was investigated by a high-temperature X-ray diffraction system, which verified the existence and transformation of several intermetallics: Cu 2 In, Cu 11 In 9, Cu 3 Ga, Cu 7 In 3, Cu 9 Ga 4 and Cu 16 In 9 as well as elemental In. MoSe 2 layers produced during selenization were detected by scanning electron microscope and X-ray diffraction, with their thicknesses varying by precursor structure. Adhesion strength of Cu(InGa)Se 2 to each Mo layer was assessed by applying CdS chemical bath deposition process to each sample.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0040609011000848; http://dx.doi.org/10.1016/j.tsf.2010.12.220; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=80052151189&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0040609011000848; https://dx.doi.org/10.1016/j.tsf.2010.12.220
Elsevier BV
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