Cu(In,Ga)Se 2 -based solar cells prepared from Se-containing precursors
Vacuum, ISSN: 0042-207X, Vol: 102, Page: 26-30
2014
- 32Citations
- 19Captures
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Article Description
In this paper, we prepared the CIGS thin films with various [Cu]/[In + Ga] ratios by selenization of Cu 0.8 Ga 0.2 and In 2 Se 3 precursor films. The properties of Cu(In,Ga)Se 2 film and related solar cell were investigated. Raman spectra confirm that the secondary Cu 2−x Se phase tends to segregate at film surface. SEM results show that the grain-size improves noticeably with the increase of the [Cu]/[In + Ga] ratios. For Cu-rich CIGS films, the performances of the related solar cells were damaged greatly and good photovoltaic characteristics cannot be obtained. For near-stoichiometric and Cu-poor films, the mean conversion efficiency close to 10% was achieved over a wide range of composition.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0042207X13003382; http://dx.doi.org/10.1016/j.vacuum.2013.10.007; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84888176599&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0042207X13003382; https://dul.usage.elsevier.com/doi/; https://api.elsevier.com/content/article/PII:S0042207X13003382?httpAccept=text/xml; https://api.elsevier.com/content/article/PII:S0042207X13003382?httpAccept=text/plain; https://dx.doi.org/10.1016/j.vacuum.2013.10.007
Elsevier BV
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