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Gamma-ray irradiation effect on planar defect evolution of lattice-matched InGaAsN/GaAs/Ge grown by MOVPE

Vacuum, ISSN: 0042-207X, Vol: 227, Page: 113396
2024
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Article Description

This study explores structural changes in lattice-matched InGaAsN/GaAs/Ge films grown by MOVPE under gamma-ray irradiation. Exposure to a 60 Co gamma rays at doses ranging from 0 to 2.0 MGy improved crystal uniformity by increasing surface grain size, reducing roughness from 8.328 nm to 3.512 nm. Planar defects in the GaAs layer traversed the InGaAsN layer, causing interface roughness. Electron diffraction patterns along the [110]-zone axis showed uniform alloy composition. TEM images revealed line contrasts at the GaAs/Ge interface extending into the InGaAsN layer, with boundary-like defects parallel to the growth direction. Additionally, (002) and ( 002‾ ) reflections, along with {111} planes, indicated planar defects, possibly antiphase boundaries. AFM and FESEM confirmed submicron-sized domains, characteristic of antiphase boundaries, in the InGaAsN film.

Bibliographic Details

Pornsiri Wanarattikan; Authit Phakkhawan; Aparporn Sakulkalavek; Nongnuch Jangsawang; Suphakan Kijamnajsuk; Visittapong Yordsri; Sakuntam Sanorpim; Pawinee Klangtakai

Elsevier BV

Physics and Astronomy; Materials Science

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