Nitride semiconductors—impact on the future world
Journal of Crystal Growth, ISSN: 0022-0248, Vol: 237, Issue: 1-4 II, Page: 905-911
2002
- 59Citations
- 57Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
A significant improvement in the crystalline quality of GaN has made it possible to produce p-type nitrides and to control the conductivity of n-type nitrides, as well as to produce high-quality quantum structures. These breakthroughs have led to such developments as high-performance short-wavelength photonic devices and high-speed electronic devices. All of these devices are the most environment-friendly ones, they are tough and should enable a tremendous saving in energy. The evolution of nitride semiconductors will have a great impact on the future world.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0022024801020772; http://dx.doi.org/10.1016/s0022-0248(01)02077-2; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0036530470&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0022024801020772; http://dx.doi.org/10.1016/s0022-0248%2801%2902077-2; https://dx.doi.org/10.1016/s0022-0248%2801%2902077-2
Elsevier BV
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