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Effects of hydrogen on carbon incorporation in GaN grown by remote plasma-enhanced metal-organic chemical vapor deposition

Journal of Crystal Growth, ISSN: 0022-0248, Vol: 189, Page: 321-324
1998
  • 17
    Citations
  • 0
    Usage
  • 18
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    17
    • Citation Indexes
      16
    • Patent Family Citations
      1
      • Patent Families
        1
  • Captures
    18

Article Description

The effects of hydrogen on carbon incorporation in GaN layers grown by remote plasma-enhanced metal-organic chemical vapor deposition were investigated. Gas-phase decomposition of TEGa was enhanced at high RF power and reactor pressure conditions. With increase in hydrogen fractions in the downstream plasma, optical emission intensity of CN abruptly decreased. It is suggested that active hydrogen species may scavenge the carbon-containing species in the gas phase, resulting in reduced carbon incorporation in GaN layers measured by 10 K photoluminescence and secondary-ion mass spectroscopy.

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