Effects of hydrogen on carbon incorporation in GaN grown by remote plasma-enhanced metal-organic chemical vapor deposition
Journal of Crystal Growth, ISSN: 0022-0248, Vol: 189, Page: 321-324
1998
- 17Citations
- 18Captures
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Article Description
The effects of hydrogen on carbon incorporation in GaN layers grown by remote plasma-enhanced metal-organic chemical vapor deposition were investigated. Gas-phase decomposition of TEGa was enhanced at high RF power and reactor pressure conditions. With increase in hydrogen fractions in the downstream plasma, optical emission intensity of CN abruptly decreased. It is suggested that active hydrogen species may scavenge the carbon-containing species in the gas phase, resulting in reduced carbon incorporation in GaN layers measured by 10 K photoluminescence and secondary-ion mass spectroscopy.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0022024898002784; http://dx.doi.org/10.1016/s0022-0248(98)00278-4; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0032091587&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0022024898002784; http://linkinghub.elsevier.com/retrieve/pii/S0022024898002784; http://api.elsevier.com/content/article/PII:S0022024898002784?httpAccept=text/xml; http://api.elsevier.com/content/article/PII:S0022024898002784?httpAccept=text/plain; http://dx.doi.org/10.1016/s0022-0248%2898%2900278-4; https://dx.doi.org/10.1016/s0022-0248%2898%2900278-4
Elsevier BV
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