0.1-μm high performance double heterojunction In 0.32 Al 0.68 As/In 0.33 Ga 0.67 As metamorphic HEMTs on GaAs
Solid-State Electronics, ISSN: 0038-1101, Vol: 44, Issue: 9, Page: 1685-1688
2000
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- 2Captures
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Article Description
High performance In 0.32 Al 0.68 As/In 0.33 Ga 0.67 As double heterojunction metamorphic high electron mobility transistors (DH-MMHEMT) have been grown by molecular beam epitaxy on GaAs substrates. An inverse step metamorphic buffer has been used to reach a relaxation rate close to 98% and a mean cross hatch of 2 nm. The DH-MMHEMT structure with a gate length of 0.1 μm exhibits a peak transconductance of 750 mS mm −1, a current density of 900 mA mm −1, a current gain cutoff frequency F t of 150 GHz and a maximum oscillation frequency F max of 250 GHz. These results clearly demonstrate the good electron transport properties of a double heterointerface structure due to the high relaxation, the good filtering of dislocations and the good control of the inverted InGaAs/InAlAs interface.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0038110100000605; http://dx.doi.org/10.1016/s0038-1101(00)00060-5; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0034274616&origin=inward; https://linkinghub.elsevier.com/retrieve/pii/S0038110100000605; http://linkinghub.elsevier.com/retrieve/pii/S0038110100000605; http://api.elsevier.com/content/article/PII:S0038110100000605?httpAccept=text/xml; http://api.elsevier.com/content/article/PII:S0038110100000605?httpAccept=text/plain; http://dx.doi.org/10.1016/s0038-1101%2800%2900060-5; https://dx.doi.org/10.1016/s0038-1101%2800%2900060-5
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