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Technology and RBS analysis of porous silicon light-emitting diodes

Thin Solid Films, ISSN: 0040-6090, Vol: 297, Issue: 1, Page: 268-271
1997
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Article Description

The technology and analysis of porous silicon electroluminescent devices and recent developments are described. An increase of efficiency in the blue range is achieved by the introduction of metals into the pores. The technologies to do this are electroplating and coevaporation. Devices with a polysilicon top layer show promising results; a quantum efficiency of 4×10 −2 % is measured. In order to investigate oxidation, degradation and local porosity, RBS (Rutherford Backscattering Spectroscopy) is used. © 1997 Elsevier Science S.A.

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