Growth of GaN on highly mismatched substrate and its application to novel devices
Diamond and Related Materials, ISSN: 0925-9635, Vol: 8, Issue: 2, Page: 302-304
1999
- 2Citations
- 8Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Crystallization process of the low-temperature-deposited AlN buffer layer on sapphire, and atomic step motion of the crystallized AlN has been observed in situ by TEM. Insertion of the second low-temperature-deposited buffer layer between high-temperature-grown GaN is found to reduce threading dislocations and to eradicate etch-pit formation.
Bibliographic Details
http://www.sciencedirect.com/science/article/pii/S0925963598002647; http://dx.doi.org/10.1016/s0925-9635(98)00264-7; http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0032614361&origin=inward; http://linkinghub.elsevier.com/retrieve/pii/S0925963598002647; http://api.elsevier.com/content/article/PII:S0925963598002647?httpAccept=text/xml; http://api.elsevier.com/content/article/PII:S0925963598002647?httpAccept=text/plain; https://linkinghub.elsevier.com/retrieve/pii/S0925963598002647; http://dx.doi.org/10.1016/s0925-9635%2898%2900264-7; https://dx.doi.org/10.1016/s0925-9635%2898%2900264-7
Elsevier BV
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