Fabrication and characteristics of GaN-based light-emitting diodes with a reduced graphene oxide current-spreading layer
ACS Applied Materials and Interfaces, ISSN: 1944-8252, Vol: 6, Issue: 24, Page: 22451-22456
2014
- 14Citations
- 25Captures
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Article Description
A reduced graphene oxide (GO) layer was produced on undoped and n-type GaN, and its effect on the current- and heat-spreading properties of GaN-based light-emitting diodes (LEDs) was studied. The reduced GO inserted between metal electrode and GaN semiconductor acted as a conducting layer and enhanced lateral current flow in the device. Especially, introduction of the reduced GO layer on the n-type GaN improved the electrical performance of the device, relative to that of conventional LEDs, due to a decrease in the series resistance of the device. The enhanced current-spreading was further of benefit, giving the device a higher light output power and a lower junction temperature at high injection currents. These results therefore indicate that reduced GO can be a suitable current and heat-spreading layer for GaN-based LEDs.
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