High electron mobility in vacuum and ambient for PDIF-CN single-crystal transistors
Journal of the American Chemical Society, ISSN: 0002-7863, Vol: 131, Issue: 7, Page: 2462-2463
2009
- 256Citations
- 168Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations256
- Citation Indexes256
- 256
- CrossRef241
- Captures168
- Readers168
- 168
Article Description
Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) [PDIF-CN ] were fabricated by lamination of the semiconductor crystal on Si-SiO /PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6-3 and ca. 3-1 cm V s , respectively, Ion:Ioff > 103, and near-zero threshold voltage. © 2009 American Chemical Society.
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