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Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array

Nano Letters, ISSN: 1530-6984, Vol: 13, Issue: 9, Page: 4317-4325
2013
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Article Description

Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition. © 2013 American Chemical Society.

Bibliographic Details

Riley, James R; Padalkar, Sonal; Li, Qiming; Lu, Ping; Koleske, Daniel D; Wierer, Jonathan J; Wang, George T; Lauhon, Lincoln J

American Chemical Society (ACS)

Chemical Engineering; Chemistry; Materials Science; Physics and Astronomy; Engineering

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