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Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current

Nature Photonics, ISSN: 1749-4893, Vol: 9, Issue: 4, Page: 247-252
2015
  • 840
    Citations
  • 0
    Usage
  • 519
    Captures
  • 4
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    840
    • Citation Indexes
      839
    • Patent Family Citations
      1
      • Patent Families
        1
  • Captures
    519
  • Mentions
    4
    • News Mentions
      4
      • News
        4

Most Recent News

Black Phosphorous Could Shine in Silicon Photonics

2-D material shows advantages over graphene as a waveguide-integrated photodetector for on-chip communications.

Article Description

Layered two-dimensional materials have demonstrated novel optoelectronic properties and are well suited for integration in planar photonic circuits. Graphene, for example, has been utilized for wideband photodetection. However, because graphene lacks a bandgap, graphene photodetectors suffer from very high dark current. In contrast, layered black phosphorous, the latest addition to the family of two-dimensional materials, is ideal for photodetector applications due to its narrow but finite bandgap. Here, we demonstrate a gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the near-infrared telecom band. In a significant advantage over graphene devices, black phosphorus photodetectors can operate under bias with very low dark current and attain an intrinsic responsivity up to 135 mA W and 657 mA W in 11.5-nm- and 100-nm-thick devices, respectively, at room temperature. The photocurrent is dominated by the photovoltaic effect with a high response bandwidth exceeding 3 GHz.

Bibliographic Details

Nathan Youngblood; Che Chen; Steven J. Koester; Mo Li

Springer Science and Business Media LLC

Materials Science; Physics and Astronomy

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