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Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices

Nature Nanotechnology, ISSN: 1748-3395, Vol: 16, Issue: 8, Page: 882-887
2021
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Article Description

The development of high-performance memory devices has played a key role in the innovation of modern electronics. Non-volatile memory devices have manifested high capacity and mechanical reliability as a mainstream technology; however, their performance has been hampered by low extinction ratio and slow operational speed. Despite substantial efforts to improve these characteristics, typical write times of hundreds of micro- or milliseconds remain a few orders of magnitude longer than that of their volatile counterparts. Here we demonstrate non-volatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, achieving ultrahigh-speed programming/erasing operations in the range of nanoseconds with extinction ratio up to 10. This enhanced performance enables new device capabilities such as multi-bit storage, thus opening up applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale up.

Bibliographic Details

Wu, Liangmei; Wang, Aiwei; Shi, Jinan; Yan, Jiahao; Zhou, Zhang; Bian, Ce; Ma, Jiajun; Ma, Ruisong; Liu, Hongtao; Chen, Jiancui; Huang, Yuan; Zhou, Wu; Bao, Lihong; Ouyang, Min; Pennycook, Stephen J; Pantelides, Sokrates T; Gao, Hong-Jun

Springer Science and Business Media LLC

Chemical Engineering; Physics and Astronomy; Engineering; Materials Science

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