The Interface between Gd and Monolayer MoS 2: A First-Principles Study
Scientific Reports, ISSN: 2045-2322, Vol: 4, Issue: 1, Page: 7368
2014
- 20Citations
- 38Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
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Metrics Details
- Citations20
- Citation Indexes20
- CrossRef20
- 20
- Captures38
- Readers38
- 38
Article Description
We analyze the electronic structure of interfaces between two-, four-And six-layer Gd(0001) and monolayer MoS 2 by first-principles calculations. Strong chemical bonds shift the Fermi energy of MoS 2 upwards into the conduction band. At the surface and interface the Gd f states shift to lower energy and new surface/interface Gd d states appear at the Fermi energy, which are strongly hybridized with the Mo 4d states and thus lead to a high spin-polarization (ferromagnetically ordered Mo magnetic moments of 0.15 €... 1/4 B). Gd therefore is an interesting candidate for spin injection into monolayer MoS 2.
Bibliographic Details
Springer Science and Business Media LLC
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