Thermal contraction in silicon nanowires at low temperatures
Nanoscale, ISSN: 2040-3364, Vol: 2, Issue: 12, Page: 2864-2867
2010
- 9Citations
- 16Captures
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Metrics Details
- Citations9
- Citation Indexes9
- CrossRef8
- Captures16
- Readers16
- 16
Article Description
The thermal expansion effect of silicon nanowires (SiNW) in [100], [110] and [111] directions with different sizes is theoretically investigated. At low temperatures, all SiNW studied exhibit a thermal contraction effect due to the lowest energy of the bending vibration mode which has a negative effect on the coefficient of thermal expansion (CTE). The CTE in [110] direction is distinctly larger than the other two growth directions because of the anisotropy of the bending mode in SiNW. Our study reveals that CTE decreases with an increase of the structure ratio γ = length/diameter, and is negative in the whole temperature range with γ = 1.3. © 2010 The Royal Society of Chemistry.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=78649836710&origin=inward; http://dx.doi.org/10.1039/c0nr00437e; http://www.ncbi.nlm.nih.gov/pubmed/20936243; https://xlink.rsc.org/?DOI=c0nr00437e; https://dx.doi.org/10.1039/c0nr00437e; https://pubs.rsc.org/en/content/articlelanding/2010/nr/c0nr00437e
Royal Society of Chemistry (RSC)
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